Micron Technology, Inc., Launches Industry's Fastest 1.8V Flash Memory Targeting Mobile Applications
BOISE, Idaho--(BUSINESS WIRE)--Oct. 6, 2003--Micron Technology,
Inc., (NYSE:MU) today announced sample availability of a new 64
megabit (Mb) high-performance Flash memory device, MT28F644W18,
developed specifically for mobile applications. This 1.8V core Flash
memory device supports an input/output (I/O) voltage of 1.8V, and is
the fastest high-density Flash memory presently available in the
market.
"Micron's new 1.8V Flash memory, operating with a random access
speed of 60ns and an 81 MHz burst frequency, enables customers to
significantly increase the throughput of their memory subsystem, well
above the devices limited to 66 MHz burst frequency currently
available," said Mario Fazio, Micron's Director of Strategic Marketing
for Wireless Products. "Finally, a Flash memory device offering
matched burst performance to Micron's CellularRAM(TM) products is
available. The combination of high-performance, low-voltage Flash
memory with our high-density, low-power CellularRAM products begets
the highest throughput memory subsystem available for 2.5G and entry
level 3G handsets."
Micron's new Flash memory architecture provides additional
enhanced performance feature sets, such as, a flexible 4Mb
multi-partitioned architecture, clock suspend, and fast programming
algorithm to meet performance demands for emerging mobile platforms.
The multi-partitioned architecture allows for more partitions and
supports code segmentation for different applications, yielding
improved efficiency. Micron's Flash Data Management (MFDM) software
manages operations and optimizes performance in this multi-bank
architecture. The clock suspend feature allows suspension of a burst
sequence for the retrieval of data from another device on the same bus
while still allowing the burst sequence to resume at a later time with
zero initial access latency penalty. The fast programming algorithm
feature enables fast data-stream programming (3.1microns/word typ.)
when the in-factory voltage is set to 12V (Vpp=12V). The same fast
data-stream programming at an in-system voltage of 1.8V (Vpp=1.8V)
makes programming and assembly easier.
"As a pure semiconductor manufacturer, Micron continues to focus
on innovation by adding new high performance products to our already
broad portfolio," said Fazio. "These devices complement Micron's
existing family of low-power Flash memory, and position Micron well to
meet the performance demands of emerging mobile markets, particularly
in applications where execute-in-place (XIP) is the architecture of
choice, such as handsets supporting VGA or mega pixel image sensors."
This 64Mb device is organized as 4 Meg x 16 and available in a
FBGA package. Micron's mobile product family also consists of other
low power Flash memory devices available in 32, 64 and 128Mb
configurations.
Micron Technology, Inc., is one of the world's leading providers
of advanced semiconductor solutions. Through its worldwide operations,
Micron manufactures and markets DRAMs, Flash memory, CMOS image
sensors, other semiconductor components and memory modules for use in
leading-edge computing, consumer, networking, and mobile products.
Micron's common stock is traded on the New York Stock Exchange (NYSE)
under the MU symbol. To learn more about Micron Technology, Inc.,
visit its Web site at www.micron.com.
Micron, Micron Technology and the Micron logo are trademarks of
Micron Technology, Inc. CellularRAM is a trademark of Micron
Technology, Inc., inside the U.S. and a trademark of Infineon
Technologies outside the U.S. All other trademarks are the property of
their respective owners.
CONTACT: Micron Technology, Inc.
Echo Chadwick, 208-368-4400
echadwick@micron.com
http://www.micron.com
